|TRIZ Case Study Paper:|
|TRIZ Application in Device & Manufacturing Electrostatic Discharge Control|
|Teong-San Yeoh (Intel Technology Sdn. Bhd., Malaysia)|
|Presented at The 8th Annual Conference of the Altshuller Institute for TRIZ Studies, Held at Milwaukee, USA, on Apr. 30 - May 2, 2006|
|[Japanese translation by Katsusuke Ichikawa and Toru Nakagawa, posted in the Japanese page on Apr. 5, 2007]|
|[Posted on Apr. 15, 2007] Under the permission by the Author.|
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Editor's Note (Toru Nakagawa, Apr. 14, 2007)
The paper posted here was originally presented a year ago at TRIZCON2006. The paper reviews the existing techniques of Electrostatic Discharge (ESD) Control for semiconductor devices with the eyes of TRIZ, and explains them in terms of TRIZ 40 Inventive Principles. The paper is a nice case study to understand a specific field of (empirical) technology on the basis of TRIZ.
I wrote 'Personal Report of TRIZCON2006' in English and posted it in my Web site. The part of reviewing this paper is cited below.
After TRIZCON2006, I asked the author and was given the permission of my translating the paper into Japanese and posting the Japanese and English versions in my Web site. Then nearly a year passed. Last month, Mr. Katsusuke Ichikawa voluntarily translated the paper into Japanese and sent me the manuscripts. After brushing it up, we have just posted the Japanese version in "TRIZ Home Page in Japan". And now we are posting the original version in this page, in PDF . We are very grateful to Dr. Teong-San Yeoh, the Author, for this nice work and for his kind permission.
Introduction & Review of the Presentation (Toru Nakagawa (OGU), Jun. 19, 2006)
Excerpt from Nakagawa's 'Personal Report of TRIZCON2006' (posted on Jun. 19, 2006)
Teong-San Yeoh (Intel Technology Sdn. Bhd., Malaysia)  gave a presentation with the title: "TRIZ Application in Device & Manufacturing Electrostatic Discharge Control". The initial part of the Abstract is:
"Electrostatic Discharge (ESD) is a common failure mechanism found in semiconductor device manufacturing. ESD can be generated from humans, machines or even during the handling of these semiconductor devices. This paper explores the application of TRIZ's Inventive Principles in device and manufacturing ESD Control. ..."
The author's approach is NOT to propose new ideas for the ESD Control problem by applying TRIZ principles, but rather to review various existing devices and methods systematically with the eyes of the TRIZ Inventive Principles. The paper examined the existent devices one by one and gave a summary of the finding as follows in the latter part of the Abstract:
"... In device ESD, the key focus is on the design of the many different ESD protection structures used in the device protection scheme. Basically, ESD protection in the device is based on the Inventive Principles of Skipping and Equipotentiality. In terms of the design of the various ESD protection cells used in the device, the fundamental design of these cells relate to the Inventive Principles which include Curvature, Cushioning in Advance, Merging, Asymmetry, Segmentation, Universality, Taking out, Blessing in Disguise and Intermediary. In manufacturing ESD, the Inventive Principles of Preliminary Action, Composite Materials and Flexible Shells & Thin Films are demonstrated.
This is one of the first attempts to assess the Inventive Principles in the device design and manufacturing ESD controls. Since ESD can be extremely difficult to control in the manufacturing process, a deeper understanding of the Inventive Principles including their application will enable more robust designs and manufacturing controls for current and future process technologies."
-- In TRIZ literature, there were a number of case studies of 'reverse inventions' where individual patents or excellent ideas were analyzed or explained afterwards with the eyes of TRIZ. But the importance of the present paper is its systematic reviewing of a field (or a specific topic) of engineering with the eyes of TRIZ. This approach can be used in various other fields and topics as well.
Original Paper in PDF
Original Paper (in English) (PDF, 347 KB, 7 pages) Click Here.
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Last updated on Apr. 15, 2007. Access point: Editor: firstname.lastname@example.org